Method for fabricating a plurality of semiconductor devices
文献类型：专利
| 作者 | KILGER, THOMAS; WACHTER, ULRICH; MAIER, DOMINIC; BEER, GOTTFRIED |
| 发表日期 | 2015-09-29 |
| 专利号 | US9147585 |
| 著作权人 | INFINEON TECHNOLOGIES AG |
| 国家 | 美国 |
| 文献子类 | 授权发明 |
| 其他题名 | Method for fabricating a plurality of semiconductor devices |
| 英文摘要 | A number of semiconductor chips each include a first main face and a second main face opposite to the first main face. A first encapsulation layer is applied over the second main faces of the semiconductor chips. An electrical wiring layer is applied over the first main faces of the first semiconductor chips. A second encapsulation layer is applied over the electrical wiring layer. The thickness of the first encapsulation layer and the thicknesses of the first semiconductor chips is reduced. The structure can be singulated to obtain a plurality of semiconductor devices. |
| 公开日期 | 2015-09-29 |
| 申请日期 | 2014-11-07 |
| 状态 | 授权 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/37786]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | INFINEON TECHNOLOGIES AG |
| 推荐引用方式 GB/T 7714 | KILGER, THOMAS,WACHTER, ULRICH,MAIER, DOMINIC,et al. Method for fabricating a plurality of semiconductor devices. US9147585. 2015-09-29. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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