Method of manufacturing light emitting device and light emitting device
文献类型：专利
| 作者 | TANISAKA, SHINGO; MASUI, SHINGO |
| 发表日期 | 2019-01-29 |
| 专利号 | US10193301 |
| 著作权人 | NICHIA CORPORATION |
| 国家 | 美国 |
| 文献子类 | 授权发明 |
| 其他题名 | Method of manufacturing light emitting device and light emitting device |
| 英文摘要 | A method of manufacturing a light emitting device includes: providing a wafer including a conductive first substrate, a laser element structure on an upper side of the first substrate, and an upper surface electrode on an upper surface of the element structure; bonding the wafer to a second substrate at an upper surface electrode side of the wafer; removing a portion of the first substrate to reduce a thickness of the wafer; forming a lower surface electrode on a lower surface of the first substrate at which the removing of the portion of the first substrate has been performed; singulating the wafer to obtain a laser element; and mounting the laser element on a submount such that the lower surface electrode faces the submount. |
| 公开日期 | 2019-01-29 |
| 申请日期 | 2018-03-28 |
| 状态 | 授权 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/38075]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | NICHIA CORPORATION |
| 推荐引用方式 GB/T 7714 | TANISAKA, SHINGO,MASUI, SHINGO. Method of manufacturing light emitting device and light emitting device. US10193301. 2019-01-29. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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