Ingan-based light-emitting diode chip and a method for the production thereof
文献类型：专利
| 作者 | BAUR, JOHANNES; BRUDERL, GEORG; HAHN, BERTHOLD; HARLE, VOLKER; STRAUSS, UWE |
| 发表日期 | 2008-05-20 |
| 专利号 | US7375377 |
| 著作权人 | OSRAM GMBH |
| 国家 | 美国 |
| 文献子类 | 授权发明 |
| 其他题名 | Ingan-based light-emitting diode chip and a method for the production thereof |
| 英文摘要 | A light-emitting diode chip (1), in which over a substrate (2), a series of epitaxial layers (3) with a radiation-emitting active structure (4) based on InGaN is disposed. Between the substrate (2) and the active structure (4), a buffer layer (20) is provided. The material or materials of the buffer layer (20) are selected such that their epitaxial surface (6) for the epitaxy of the active structure (4) is unstressed or slightly stressed at their epitaxial temperature. The active structure (4) has In-rich zones (5), disposed laterally side by side relative to the epitaxial plane, in which zones the In content is higher than in other regions of the active structure (4). A preferred method for producing the chip is disclosed. |
| 公开日期 | 2008-05-20 |
| 申请日期 | 2001-06-13 |
| 状态 | 授权 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/38107]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | OSRAM GMBH |
| 推荐引用方式 GB/T 7714 | BAUR, JOHANNES,BRUDERL, GEORG,HAHN, BERTHOLD,et al. Ingan-based light-emitting diode chip and a method for the production thereof. US7375377. 2008-05-20. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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