Light emitting diodes with graded composition active regions
文献类型：专利
| 作者 | BOUR, DAVID P.; GARDNER, NATHAN F.; GOETZ, WERNER K.; STOCKMAN, STEPHEN A.; TAKEUCHI, TETSUYA; HASNAIN, GHULAM; KOCOT, CHRISTOPHER P.; HUESCHEN, MARK R. |
| 发表日期 | 2005-10-18 |
| 专利号 | US6955933 |
| 著作权人 | LUMILEDS LLC |
| 国家 | 美国 |
| 文献子类 | 授权发明 |
| 其他题名 | Light emitting diodes with graded composition active regions |
| 英文摘要 | A light emitting device in accordance with an embodiment of the present invention includes a first semiconductor layer of a first conductivity type having a first surface, and an active region formed overlying the first semiconductor layer. The active region includes a second semiconductor layer which is either a quantum well layer or a barrier layer. The second semiconductor layer is formed from a semiconductor alloy having a composition graded in a direction substantially perpendicular to the first surface of the first semiconductor layer. The light emitting device also includes a third semiconductor layer of a second conductivity type formed overlying the active region. |
| 公开日期 | 2005-10-18 |
| 申请日期 | 2001-07-24 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/38112]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | LUMILEDS LLC |
| 推荐引用方式 GB/T 7714 | BOUR, DAVID P.,GARDNER, NATHAN F.,GOETZ, WERNER K.,et al. Light emitting diodes with graded composition active regions. US6955933. 2005-10-18. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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