Dislocation reduction in non-polar gallium nitride thin films
文献类型：专利
| 作者 | CRAVEN, MICHAEL D.; DENBAARS, STEVEN P.; SPECK, JAMES STEPHEN |
| 发表日期 | 2005-05-31 |
| 专利号 | US6900070 |
| 著作权人 | REGENTS OF THE UNIVERSITY OF CALIFORNIA, THE |
| 国家 | 美国 |
| 文献子类 | 授权发明 |
| 其他题名 | Dislocation reduction in non-polar gallium nitride thin films |
| 英文摘要 | Lateral epitaxial overgrowth of non-polar (11{overscore (2)}0) a-plane GaN seed layers reduces threading dislocations in the GaN films. First, a thin patterned dielectric mask is applied to the seed layer. Second, a selective epitaxial regrowth is performed to achieve a lateral overgrowth based on the patterned mask. Upon regrowth, the GaN films initially grow vertically through openings in the dielectric mask before laterally overgrowing the mask in directions perpendicular to the vertical growth direction. Threading dislocations are reduced in the overgrown regions by (1) the mask blocking the propagation of dislocations vertically into the growing film and (2) the bending of dislocations through the transition from vertical to lateral growth. |
| 公开日期 | 2005-05-31 |
| 申请日期 | 2003-04-15 |
| 状态 | 授权 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/38153]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | REGENTS OF THE UNIVERSITY OF CALIFORNIA, THE |
| 推荐引用方式 GB/T 7714 | CRAVEN, MICHAEL D.,DENBAARS, STEVEN P.,SPECK, JAMES STEPHEN. Dislocation reduction in non-polar gallium nitride thin films. US6900070. 2005-05-31. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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