Semiconductor device in which zinc oxide is used as a semiconductor material and method for manufacturing the semiconductor device
文献类型：专利
| 作者 | ITO, YOSHIHIRO; KADOTA, MICHIO |
| 发表日期 | 2009-03-10 |
| 专利号 | US7501293 |
| 著作权人 | MURATA MANUFACTURING CO., LTD. |
| 国家 | 美国 |
| 文献子类 | 授权发明 |
| 其他题名 | Semiconductor device in which zinc oxide is used as a semiconductor material and method for manufacturing the semiconductor device |
| 英文摘要 | A semiconductor device having excellent crystallinity and excellent electric characteristics includes a ZnO thin film having excellent surface smoothness. ZnO-based thin films (an n-type contact layer, an n-type clad layer, an active layer, a p-type clad layer, and a p-type contact layer) primarily including ZnO are formed sequentially by an ECR sputtering method or other suitable method on a zinc-polar surface of a ZnO substrate. A transparent electrode and a p-side electrode are formed by an evaporation method or other suitable method on a surface of the p-type contact layer, and an n-side electrode is formed on an oxygen-polar surface of the ZnO substrate. |
| 公开日期 | 2009-03-10 |
| 申请日期 | 2003-06-04 |
| 状态 | 授权 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/38161]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | MURATA MANUFACTURING CO., LTD. |
| 推荐引用方式 GB/T 7714 | ITO, YOSHIHIRO,KADOTA, MICHIO. Semiconductor device in which zinc oxide is used as a semiconductor material and method for manufacturing the semiconductor device. US7501293. 2009-03-10. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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