Semiconductor light emitting device and method for producing the same
文献类型：专利
| 作者 | TANI, KENTARO |
| 发表日期 | 2006-05-09 |
| 专利号 | US7042023 |
| 著作权人 | SHARP KABUSHIKI KAISHA |
| 国家 | 美国 |
| 文献子类 | 授权发明 |
| 其他题名 | Semiconductor light emitting device and method for producing the same |
| 英文摘要 | A semiconductor light emitting device includes a semiconductor substrate; a stacked semiconductor structure formed on the semiconductor substrate; a striped ridge structure; and a semiconductor current confinement layer provided on a side surface of the striped ridge structure. The stacked semiconductor structure includes a first semiconductor clad layer, a semiconductor active layer, a second semiconductor clad layer, and a semiconductor etching stop layer. The striped ridge structure includes a third semiconductor clad layer, a semiconductor intermediate layer, and a semiconductor cap layer. The striped ridge structure is provided on the semiconductor etching stop layer. An interface between the semiconductor current confinement layer and the semiconductor etching stop layer and an interface between the semiconductor current confinement layer and the striped ridge structure each have a content of impurities of less than 1×1017/cm3. |
| 公开日期 | 2006-05-09 |
| 申请日期 | 2003-07-22 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/38165]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | SHARP KABUSHIKI KAISHA |
| 推荐引用方式 GB/T 7714 | TANI, KENTARO. Semiconductor light emitting device and method for producing the same. US7042023. 2006-05-09. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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