MBE growth of an algan layer or AlGaN multilayer structure
文献类型：专利
| 作者 | BOUSQUET, VALERIE; HOOPER, STEWART EDWARD; BARNES, JENNIFER MARY; JOHNSON, KATHERINE L.; HEFFERNAN, JONATHAN |
| 发表日期 | 2009-03-17 |
| 专利号 | US7504321 |
| 著作权人 | SHARP KABUSHIKI KAISHA |
| 国家 | 美国 |
| 文献子类 | 授权发明 |
| 其他题名 | MBE growth of an algan layer or AlGaN multilayer structure |
| 英文摘要 | A method of growing an AlGaN semiconductor layer structure by Molecular Beam Epitaxy comprises supplying ammonia, gallium and aluminum to a growth chamber thereby to grow a first (Al,Ga)N layer by MBE over a substrate disposed in the growth chamber. The first (Al,Ga)N layer has a non-zero aluminum mole fraction. Ammonia is supplied at a beam equivalent pressure of at least 1 10−4 mbar, gallium is supplied at a beam equivalent pressure of at least 1 10−8 mbar and aluminum is supplied at a beam equivalent pressure of at least 1 10−8 mbar during the growth step. Once the first (Al,Ga)N layer has been grown, varying the supply rate of gallium and/or aluminum enables a second (Al,Ga)N layer, having a different aluminum mole fraction from the first (Al,Ga)N layer to be grown by MBE over the first (Al,Ga)N layer. This process may be repeated to grown an (Al,Ga)N multilayer structure. |
| 公开日期 | 2009-03-17 |
| 申请日期 | 2003-08-18 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/38171]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | SHARP KABUSHIKI KAISHA |
| 推荐引用方式 GB/T 7714 | BOUSQUET, VALERIE,HOOPER, STEWART EDWARD,BARNES, JENNIFER MARY,et al. MBE growth of an algan layer or AlGaN multilayer structure. US7504321. 2009-03-17. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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