Generating multiple bandgaps using multiple epitaxial layers
文献类型:专利
作者 | DAN, ANDREYEVITCH, YANSON; GIANLUCA, BACCHIN; OLEK, PETER, KOWALSKI; STEWART, DUNCAN, MCDOUGALL |
发表日期 | 2006-02-15 |
专利号 | GB2409572B |
著作权人 | INTENSE, INC. |
国家 | 英国 |
文献子类 | 授权发明 |
其他题名 | Generating multiple bandgaps using multiple epitaxial layers |
英文摘要 | A quantum well intermixing (QWI) technique for modifying an energy bandgap during the formation of optical semiconductor devices enables spatial control of the QWI process so as to achieve differing bandgap shifts across a wafer, device or substrate surface. The method includes: forming a substrate comprising one or more core layers defining at least one quantum well; depositing a succession of intermixing barrier layers 20 - 24 over the quantum well, each successive intermixing barrier layer being formed of a semiconductor material and having a different etch characteristic than an immediately preceding barrier layer; etching away different numbers of the successive barrier layers in different regions of the substrate so as to provide different total thicknesses of barrier layer in different regions of the substrate; ; and applying an intermixing agent 40 to the surface of the substrate such that the degree of intermixing in the quantum well region varies as a function of the total thickness of barrier layer, thereby forming different bandgaps BG0 - BG3 in the quantum well in each of the respective regions. |
公开日期 | 2006-02-15 |
申请日期 | 2003-12-24 |
状态 | 授权 |
源URL | [http://ir.opt.ac.cn/handle/181661/38186] ![]() |
专题 | 半导体激光器专利数据库 |
作者单位 | INTENSE, INC. |
推荐引用方式 GB/T 7714 | DAN, ANDREYEVITCH, YANSON,GIANLUCA, BACCHIN,OLEK, PETER, KOWALSKI,et al. Generating multiple bandgaps using multiple epitaxial layers. GB2409572B. 2006-02-15. |
入库方式: OAI收割
来源:西安光学精密机械研究所
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