中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
Generating multiple bandgaps using multiple epitaxial layers

文献类型:专利

作者DAN, ANDREYEVITCH, YANSON; GIANLUCA, BACCHIN; OLEK, PETER, KOWALSKI; STEWART, DUNCAN, MCDOUGALL
发表日期2006-02-15
专利号GB2409572B
著作权人INTENSE, INC.
国家英国
文献子类授权发明
其他题名Generating multiple bandgaps using multiple epitaxial layers
英文摘要A quantum well intermixing (QWI) technique for modifying an energy bandgap during the formation of optical semiconductor devices enables spatial control of the QWI process so as to achieve differing bandgap shifts across a wafer, device or substrate surface. The method includes: forming a substrate comprising one or more core layers defining at least one quantum well; depositing a succession of intermixing barrier layers 20 - 24 over the quantum well, each successive intermixing barrier layer being formed of a semiconductor material and having a different etch characteristic than an immediately preceding barrier layer; etching away different numbers of the successive barrier layers in different regions of the substrate so as to provide different total thicknesses of barrier layer in different regions of the substrate; ; and applying an intermixing agent 40 to the surface of the substrate such that the degree of intermixing in the quantum well region varies as a function of the total thickness of barrier layer, thereby forming different bandgaps BG0 - BG3 in the quantum well in each of the respective regions.
公开日期2006-02-15
申请日期2003-12-24
状态授权
源URL[http://ir.opt.ac.cn/handle/181661/38186]  
专题半导体激光器专利数据库
作者单位INTENSE, INC.
推荐引用方式
GB/T 7714
DAN, ANDREYEVITCH, YANSON,GIANLUCA, BACCHIN,OLEK, PETER, KOWALSKI,et al. Generating multiple bandgaps using multiple epitaxial layers. GB2409572B. 2006-02-15.

入库方式: OAI收割

来源:西安光学精密机械研究所

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