中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
Light-emitting device manufacturing method and light-emitting device

文献类型:专利

作者OHNO, EIJI; TAKAHASHI, SYOICHI; KAWAMURA, MIKIYOSHI; YAMAMURA, MINORU; TAMAKI, TADASHI; OBA, HAYATO; KAGIWADA, MASATAKA; TAKAYAMA, HIROYUKI; TERAMURA, KEI; OHTAKA, ATSUSHI
发表日期2010-09-14
专利号US7795053
著作权人SH PRECISION CO., LTD.
国家美国
文献子类授权发明
其他题名Light-emitting device manufacturing method and light-emitting device
英文摘要A method for producing a light-emitting device comprising: a step of electrically connecting a first electrode provided on one main surface of a semiconductor substrate (element substrate) through a light-emitting layer, and a first lead of a lead frame, so as to oppose each other; a step of electrically connecting a second electrode provided on the rear surface of a surface provided with the light-emitting layer of said element substrate, and a second lead of the above-described lead frame; a step of encapsulating a connecting part of said first electrode and said first lead, and said second electrode, and an electrode part of the second lead, with a transparent resin; and a step of producing a discrete edge by cutting said first lead and the second lead from said lead frame; wherein a film of joining material (joining material film) made of an alloy or a single metal, is formed on the first electrode of said light-emitting element, and a pattern to reduce spreading of said joining material is formed on an element mounting part of said first lead, in advance of the step of electrically connecting the first electrode of said light-emitting element and said first lead, to reduce amount of the joining material flowing outside of a joining area wherein the first electrode is placed.
公开日期2010-09-14
申请日期2004-03-24
状态授权
源URL[http://ir.opt.ac.cn/handle/181661/38201]  
专题半导体激光器专利数据库
作者单位SH PRECISION CO., LTD.
推荐引用方式
GB/T 7714
OHNO, EIJI,TAKAHASHI, SYOICHI,KAWAMURA, MIKIYOSHI,et al. Light-emitting device manufacturing method and light-emitting device. US7795053. 2010-09-14.

入库方式: OAI收割

来源:西安光学精密机械研究所

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