Method for fabricating group-III nitride devices and devices fabricated using method
文献类型：专利
| 作者 | NAKAMURA, SHUJI; DENBAARS, STEVEN; EDMOND, JOHN; SWOBODA, CHUCK; MISHRA, UMESH |
| 发表日期 | 2008-02-19 |
| 专利号 | US7332365 |
| 著作权人 | CREE, INC. |
| 国家 | 美国 |
| 文献子类 | 授权发明 |
| 其他题名 | Method for fabricating group-III nitride devices and devices fabricated using method |
| 英文摘要 | A method according to the present invention for fabricating high light extraction photonic devices comprising growing an epitaxial semiconductor structure on a substrate and depositing a first mirror layer on the epitaxial semiconductor structure such that the epitaxial semiconductor structure is sandwiched between the first mirror layer and the substrate. Flip-chip mounting the epitaxial semiconductor structure, with its first mirror and substrate on a submount such that the epitaxial semiconductor device structure is sandwiched between the submount and substrate. The substrate is then removed from the epitaxial structure by introducing an etch environment to the substrate. A second mirror layer is deposited on the epitaxial semiconductor structure such that the epitaxial semiconductor structure is sandwiched between the first and second mirror layers. A device according to the present invention comprising a resonant cavity light emitting diode (RCLED) mounted to a submount. |
| 公开日期 | 2008-02-19 |
| 申请日期 | 2004-05-18 |
| 状态 | 授权 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/38210]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | CREE, INC. |
| 推荐引用方式 GB/T 7714 | NAKAMURA, SHUJI,DENBAARS, STEVEN,EDMOND, JOHN,et al. Method for fabricating group-III nitride devices and devices fabricated using method. US7332365. 2008-02-19. |
入库方式： OAI收割
来源：西安光学精密机械研究所
浏览0
下载0
收藏0
其他版本
除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。