Technique to grow high quality ZnSe epitaxy layer on Si substrate
文献类型：专利
| 作者 | YANG, TSUNG-HSI; LEE, CHUNG-LIANG; YANG, CHU-SHOU; LUO, GUANGLI; CHOU, WU-CHING; CHANG, CHUN-YEN; YANG, TSUNG-YEH |
| 发表日期 | 2006-07-04 |
| 专利号 | US7071087 |
| 著作权人 | WITTY MATE CORPORATION |
| 国家 | 美国 |
| 文献子类 | 授权发明 |
| 其他题名 | Technique to grow high quality ZnSe epitaxy layer on Si substrate |
| 英文摘要 | A technique to grow high quality and large area ZnSe layer on Si substrate is provided, comprising growing GexSi1−x/Ge epitaxial layers on Si substrate by using ultra-high vacuum chemical vapor deposition (UHVCVD), and finally growing a ZnSe film on top Ge buffer layers. Two concepts are applied in the process of this invention, the first one is to block the dislocations generated from GexSi1−x epitaxial layers and to terminate the propagated upward dislocations by using strained interfaces, accordingly the dislocation density of ZnSe layer is greatly reduced and the surface roughness is improved; the second concept is to solve the problems of anti-phase domain due to growth of polar materials on non-polar material using off-cut angle Si substrate, and that is free from diffusion problems between different atoms while generally growing ZnSe layers on Si substrate. |
| 公开日期 | 2006-07-04 |
| 申请日期 | 2004-06-03 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/38211]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | WITTY MATE CORPORATION |
| 推荐引用方式 GB/T 7714 | YANG, TSUNG-HSI,LEE, CHUNG-LIANG,YANG, CHU-SHOU,et al. Technique to grow high quality ZnSe epitaxy layer on Si substrate. US7071087. 2006-07-04. |
入库方式： OAI收割
来源：西安光学精密机械研究所
浏览0
下载0
收藏0
其他版本
除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。