Flip chip light emitting diode devices having thinned or removed substrates
文献类型：专利
| 作者 | ELIASHEVICH, IVAN; KOLODIN, BORIS; STEFANOV, EMIL P. |
| 发表日期 | 2008-11-25 |
| 专利号 | US7456035 |
| 著作权人 | CURRENT LIGHTING SOLUTIONS, LLC |
| 国家 | 美国 |
| 文献子类 | 授权发明 |
| 其他题名 | Flip chip light emitting diode devices having thinned or removed substrates |
| 英文摘要 | In a method for fabricating a flip-chip light emitting diode device, epitaxial layers (14, 114) are deposited on a growth substrate (16, 116) to produce an epitaxial wafer. A plurality of light emitting diode devices are fabricated on the epitaxial wafer. The epitaxial wafer is diced to generate a device die (10, 110). The device die (10, 110) is flip chip bonded to a mount (12, 112). The flip chip bonding includes securing the device die (10, 110) to the mount (12, 112) by bonding at least one electrode (20, 22, 120) of the device die (10, 110) to at least one bonding pad (26, 28, 126) of the mount (12, 112). Subsequent to the flip chip bonding, a thickness of the growth substrate (16, 116) of the device die (10, 110) is reduced. |
| 公开日期 | 2008-11-25 |
| 申请日期 | 2004-07-27 |
| 状态 | 授权 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/38215]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | CURRENT LIGHTING SOLUTIONS, LLC |
| 推荐引用方式 GB/T 7714 | ELIASHEVICH, IVAN,KOLODIN, BORIS,STEFANOV, EMIL P.. Flip chip light emitting diode devices having thinned or removed substrates. US7456035. 2008-11-25. |
入库方式： OAI收割
来源：西安光学精密机械研究所
浏览0
下载0
收藏0
其他版本
除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。