Epitaxial wafers, method for manufacturing of epitaxial wafers, method of suppressing bowing of these epitaxial wafers and semiconductor multilayer structures using these epitaxial wafers
文献类型：专利
| 作者 | SAKAI, MASAHIRO; TANAKA, MITSUHIRO; EGAWA, TAKASHI |
| 发表日期 | 2009-01-20 |
| 专利号 | US7479658 |
| 著作权人 | NGK INSULATORS, LTD. |
| 国家 | 美国 |
| 文献子类 | 授权发明 |
| 其他题名 | Epitaxial wafers, method for manufacturing of epitaxial wafers, method of suppressing bowing of these epitaxial wafers and semiconductor multilayer structures using these epitaxial wafers |
| 英文摘要 | A technique for suppressing the bowing of an epitaxial wafer is provided. The epitaxial wafer is prepared by successively epitaxially growing a target group III-nitride layer, an interlayer and another group III-nitride layer on a substrate with a buffer layer. The interlayer is mainly composed of a mixed crystal of GaN and InN expressed in a general formula (GaxIny)N (0≦x≦1, 0≦y≦1, x+y=1) (or a crystal of GaN), and does not contain Al. The interlayer is epitaxially formed at a lower growth temperature than those of the group III-nitride layers, more specifically at a temperature in a range of at least 350° C. to not more than 1000° C. |
| 公开日期 | 2009-01-20 |
| 申请日期 | 2004-08-02 |
| 状态 | 授权 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/38217]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | NGK INSULATORS, LTD. |
| 推荐引用方式 GB/T 7714 | SAKAI, MASAHIRO,TANAKA, MITSUHIRO,EGAWA, TAKASHI. Epitaxial wafers, method for manufacturing of epitaxial wafers, method of suppressing bowing of these epitaxial wafers and semiconductor multilayer structures using these epitaxial wafers. US7479658. 2009-01-20. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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