Method for fabricating a group III nitride semiconductor laser device
文献类型：专利
| 作者 | TAKATANI, KUNIHIRO; ITO, SHIGETOSHI; YUASA, TAKAYUKI; TANEYA, MOTOTAKA; MOTOKI, KENSAKU |
| 发表日期 | 2006-03-21 |
| 专利号 | US7015058 |
| 著作权人 | SHARP KABUSHIKI KAISHA |
| 国家 | 美国 |
| 文献子类 | 授权发明 |
| 其他题名 | Method for fabricating a group III nitride semiconductor laser device |
| 英文摘要 | A nitride semiconductor laser device using a group III nitride semiconductor also as a substrate offers excellent operation characteristics and a long laser oscillation life. In a layered structure of a group III nitride semiconductor formed on a GaN substrate, a laser optical waveguide region is formed elsewhere than right above a dislocation-concentrated region extending so as to vertically penetrate the substrate, and electrodes are formed on the top surface of the layered structure and on the bottom surface of the substrate elsewhere than right above or below the dislocation-concentrated region. In a portion of the top surface of the layered structure and in a portion of the bottom surface of the substrate right above and below the dislocation-concentrated region, dielectric layers may be formed to prevent the electrodes from making contact with those regions. |
| 公开日期 | 2006-03-21 |
| 申请日期 | 2004-08-13 |
| 状态 | 授权 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/38218]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | SHARP KABUSHIKI KAISHA |
| 推荐引用方式 GB/T 7714 | TAKATANI, KUNIHIRO,ITO, SHIGETOSHI,YUASA, TAKAYUKI,et al. Method for fabricating a group III nitride semiconductor laser device. US7015058. 2006-03-21. |
入库方式： OAI收割
来源：西安光学精密机械研究所
浏览0
下载0
收藏0
其他版本
除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。