MBE growth of a semiconductor laser diode
文献类型：专利
| 作者 | HOOPER, STEWART; BOUSQUET, VALERIE; JOHNSON, KATHERINE L.; KAUER, MATTHIAS; HEFFERNAN, JONATHAN |
| 发表日期 | 2011-01-11 |
| 专利号 | US7867799 |
| 著作权人 | SHARP KABUSHIKI KAISHA |
| 国家 | 美国 |
| 文献子类 | 授权发明 |
| 其他题名 | MBE growth of a semiconductor laser diode |
| 英文摘要 | A method of fabricating a continuous wave semiconductor laser diode in the (Al,Ga,In)N materials system comprises: growing, in sequence, a first cladding region (4), a first optical guiding region (5), an active region (6), a second optical guiding region (7) and a second cladding region (8). Each of the first cladding region (4), the first optical guiding region (5), the active region (6), the second optical guiding region (7) and the second cladding region (8) is deposited by molecular beam epitaxy. |
| 公开日期 | 2011-01-11 |
| 申请日期 | 2004-10-27 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/38230]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | SHARP KABUSHIKI KAISHA |
| 推荐引用方式 GB/T 7714 | HOOPER, STEWART,BOUSQUET, VALERIE,JOHNSON, KATHERINE L.,et al. MBE growth of a semiconductor laser diode. US7867799. 2011-01-11. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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