Photonic integrated device using reverse-mesa structure and method for fabricating the same
文献类型：专利
| 作者 | PARK, BYEONG-HOON; BAE, YU-DONG; KIM, IN; KANG, BYUNG-KWON; KIM, YOUNG-HYUN; LEE, SANG-MOON |
| 发表日期 | 2007-10-30 |
| 专利号 | US7288422 |
| 著作权人 | SAMSUNG ELECTRONICS CO., LTD. |
| 国家 | 美国 |
| 文献子类 | 授权发明 |
| 其他题名 | Photonic integrated device using reverse-mesa structure and method for fabricating the same |
| 英文摘要 | A photonic integrated device using a reverse-mesa structure and a method for fabricating the same are disclosed. The photonic integrated device includes a first conductive substrate on which a semiconductor laser, an optical modulator, a semiconductor optical amplifier, and a photo detector are integrated, a first conductive clad layer and an active layer sequentially formed on the first conductive substrate in the form of a mesa structure, a second conductive clad layer formed on the active layer in the form of a reverse-mesa structure, an ohmic contact layer formed on the second clad layer in such a manner that the ohmic contact layer has a width narrower than the width of an upper surface of the second conductive clad layer, a current shielding layer filled in a sidewall having a mesa and reverse-mesa structure, and at least one window area formed between the above elements. |
| 公开日期 | 2007-10-30 |
| 申请日期 | 2004-11-18 |
| 状态 | 授权 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/38232]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | SAMSUNG ELECTRONICS CO., LTD. |
| 推荐引用方式 GB/T 7714 | PARK, BYEONG-HOON,BAE, YU-DONG,KIM, IN,et al. Photonic integrated device using reverse-mesa structure and method for fabricating the same. US7288422. 2007-10-30. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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