Method for making compound semiconductor and method for making semiconductor device
文献类型：专利
| 作者 | SATO, YASUO; HINO, TOMONORI; NARUI, HIRONOBU |
| 发表日期 | 2009-08-18 |
| 专利号 | US7575946 |
| 著作权人 | SONY CORPORATION |
| 国家 | 美国 |
| 文献子类 | 授权发明 |
| 其他题名 | Method for making compound semiconductor and method for making semiconductor device |
| 英文摘要 | In a method for making a compound semiconductor including a substrate and a compound semiconductor layer having a lattice mismatch ratio of 2% or more relative to the substrate, the method includes a first epitaxial growth step of forming a buffer layer on the substrate, the buffer layer having a predetermined distribution of lattice mismatch ratios in the thickness direction so as to reduce strain; and a second epitaxial growth step of forming the compound semiconductor layer on the buffer layer. The first epitaxial growth step is carried out by metal organic chemical vapor deposition at a deposition temperature of 600° C. or less. |
| 公开日期 | 2009-08-18 |
| 申请日期 | 2005-03-14 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/38248]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | SONY CORPORATION |
| 推荐引用方式 GB/T 7714 | SATO, YASUO,HINO, TOMONORI,NARUI, HIRONOBU. Method for making compound semiconductor and method for making semiconductor device. US7575946. 2009-08-18. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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