Optical semiconductor device and fabrication method therefor
文献类型：专利
| 作者 | TOMABECHI, SHUICHI; YAMAMOTO, TSUYOSHI |
| 发表日期 | 2009-10-06 |
| 专利号 | US7598106 |
| 著作权人 | FUJITSU LIMITED |
| 国家 | 美国 |
| 文献子类 | 授权发明 |
| 其他题名 | Optical semiconductor device and fabrication method therefor |
| 英文摘要 | An optical semiconductor device such as, for example, a quantum dot SOA and a fabrication method therefor are disclosed wherein an active layer and a current constriction structure can be formed leftwardly and rightwardly symmetrically to minimize the polarization dependency. The fabrication method for an optical semiconductor device includes the steps of forming a semiconductor layer on a semiconductor substrate, forming a groove by removing the semiconductor layer at an opening of a mask, forming a first clad layer in the form of a projection having two symmetrical inclined faces in the groove by selective growth by using the mask as a selective growth mask, forming an active layer on the two inclined faces of the first clad layer, and removing the mask and burying the active layer with a second clad layer. |
| 公开日期 | 2009-10-06 |
| 申请日期 | 2005-04-22 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/38255]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | FUJITSU LIMITED |
| 推荐引用方式 GB/T 7714 | TOMABECHI, SHUICHI,YAMAMOTO, TSUYOSHI. Optical semiconductor device and fabrication method therefor. US7598106. 2009-10-06. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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