Methods of treating a silicon carbide substrate for improved epitaxial deposition and resulting structures and devices
文献类型：专利
| 作者 | MCCLURE, DAVIS ANDREW; SUVOROV, ALEXANDER; EDMOND, JOHN ADAM; SLATER, JR., DAVID BEARDSLEY |
| 发表日期 | 2010-03-09 |
| 专利号 | US7675068 |
| 著作权人 | CREE, INC. |
| 国家 | 美国 |
| 文献子类 | 授权发明 |
| 其他题名 | Methods of treating a silicon carbide substrate for improved epitaxial deposition and resulting structures and devices |
| 英文摘要 | A silicon carbide structure is disclosed that is suitable for use as a substrate in the manufacture of electronic devices such as light emitting diodes. The structure includes a silicon carbide wafer having a first and second surface and having a predetermined conductivity type and an initial carrier concentration; a region of implanted dopant atoms extending from the first surface into the silicon carbide wafer to a predetermined depth, with the region having a higher carrier concentration than the initial carrier concentration in the remainder of the wafer; and an epitaxial layer on the first surface of the silicon carbide wafer. |
| 公开日期 | 2010-03-09 |
| 申请日期 | 2005-10-05 |
| 状态 | 授权 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/38275]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | CREE, INC. |
| 推荐引用方式 GB/T 7714 | MCCLURE, DAVIS ANDREW,SUVOROV, ALEXANDER,EDMOND, JOHN ADAM,et al. Methods of treating a silicon carbide substrate for improved epitaxial deposition and resulting structures and devices. US7675068. 2010-03-09. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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