Diode having high brightness and method thereof
文献类型：专利
| 作者 | YOO, MYUNG CHEOL |
| 发表日期 | 2009-09-01 |
| 专利号 | US7582912 |
| 著作权人 | LG INNOTEK CO. LTD. |
| 国家 | 美国 |
| 文献子类 | 授权发明 |
| 其他题名 | Diode having high brightness and method thereof |
| 英文摘要 | A light emitting diode includes a transparent substrate and a GaN buffer layer on the transparent substrate. An n-GaN layer is formed on the buffer layer. An active layer is formed on the n-GaN layer. A p-GaN layer is formed on the active layer. A p-electrode is formed on the p-GaN layer and an n-electrode is formed on the n-GaN layer. A reflective layer is formed on a second side of the transparent substrate. Also, a cladding layer of AlGaN is between the p-GaN layer and the active layer. |
| 公开日期 | 2009-09-01 |
| 申请日期 | 2005-10-12 |
| 状态 | 授权 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/38276]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | LG INNOTEK CO. LTD. |
| 推荐引用方式 GB/T 7714 | YOO, MYUNG CHEOL. Diode having high brightness and method thereof. US7582912. 2009-09-01. |
入库方式： OAI收割
来源：西安光学精密机械研究所
浏览0
下载0
收藏0
其他版本
除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。