In-situ mask removal in selective area epitaxy using metal organic chemical vapor deposition
文献类型：专利
| 作者 | HUFFAKER, DIANA L.; BIRODAVOLU, SANDY |
| 发表日期 | 2007-10-30 |
| 专利号 | US7288423 |
| 著作权人 | STC.UNM |
| 国家 | 美国 |
| 文献子类 | 授权发明 |
| 其他题名 | In-situ mask removal in selective area epitaxy using metal organic chemical vapor deposition |
| 英文摘要 | A method for removing a mask in a selective area epitaxy process is provided. The method includes forming a first layer on a substrate and oxidizing the first layer. A patterned photoresist can be formed on the oxidized first layer. A portion of the oxidized first layer can then be removed using a wet chemical etch to form a mask. After removing the patterned photoresist a second layer can be epitaxially grown in a metal organic chemical vapor deposition (MOCVD) chamber or a chemical beam epitaxy (CBE) chamber on a portion of the first layer exposed by the mask. The mask can then be removed the mask in the MOCVD/MBE chamber. The disclosed in-situ mask removal method minimizes both the atmospheric exposure of a growth surface and the number of sample transfers. |
| 公开日期 | 2007-10-30 |
| 申请日期 | 2006-01-06 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/38287]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | STC.UNM |
| 推荐引用方式 GB/T 7714 | HUFFAKER, DIANA L.,BIRODAVOLU, SANDY. In-situ mask removal in selective area epitaxy using metal organic chemical vapor deposition. US7288423. 2007-10-30. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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