Semiconductor light-emitting device and a method for manufacturing the same
文献类型：专利
| 作者 | MURATA, MICHIO |
| 发表日期 | 2010-09-28 |
| 专利号 | US7803645 |
| 著作权人 | SUMITOMO ELECTRIC INDUSTRIES, LTD. |
| 国家 | 美国 |
| 文献子类 | 授权发明 |
| 其他题名 | Semiconductor light-emitting device and a method for manufacturing the same |
| 英文摘要 | The present invention is to provide a light-emitting device, a laser diode, formed without using the mechanical cleavage, and a process for manufacturing the device. The process comprises, after stacking semiconductor layers of the first cladding layer, the active layer, and the second cladding layer, a forming of a groove to define the laser resonator, the depth of which reaches the substrate, and the mass-transportation, within the groove, from the side surface of the groove in a portion of the substrate and the first cladding layer to the facet of the active layer and the second cladding layer. Since the facet layer thus transported reflects the crystal orientation of the side of the groove, the crystal quality of the facet layer can be maintained. |
| 公开日期 | 2010-09-28 |
| 申请日期 | 2006-02-27 |
| 状态 | 授权 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/38291]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | SUMITOMO ELECTRIC INDUSTRIES, LTD. |
| 推荐引用方式 GB/T 7714 | MURATA, MICHIO. Semiconductor light-emitting device and a method for manufacturing the same. US7803645. 2010-09-28. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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