Method of manufacturing a semiconductor device including a slab layer with a periodic air hole structure and a linear defect region
文献类型：专利
| 作者 | SUGITATSU, ATSUSHI; TADA, HITOSHI; NODA, SUSUMU |
| 发表日期 | 2008-06-24 |
| 专利号 | US7390683 |
| 著作权人 | MITSUBISHI DENKI KABUSHIKI KAISHA |
| 国家 | 美国 |
| 文献子类 | 授权发明 |
| 其他题名 | Method of manufacturing a semiconductor device including a slab layer with a periodic air hole structure and a linear defect region |
| 英文摘要 | A semiconductor device has a two-dimensional slab photonic crystal structure in which a substrate supports a sheet-like slab layer including, sequentially stacked, a lower cladding layer, an active layer, and an upper cladding layer. A periodic refractive index profile structure, in surfaces of the stacked layers, introduces a linear defect region that serves as a waveguide. A p-type region and an n-type region in the slab layer define a pn junction surface at a predetermined angle with respect to the surfaces of the stacked layers in the slab layer. |
| 公开日期 | 2008-06-24 |
| 申请日期 | 2006-03-15 |
| 状态 | 授权 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/38293]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | MITSUBISHI DENKI KABUSHIKI KAISHA |
| 推荐引用方式 GB/T 7714 | SUGITATSU, ATSUSHI,TADA, HITOSHI,NODA, SUSUMU. Method of manufacturing a semiconductor device including a slab layer with a periodic air hole structure and a linear defect region. US7390683. 2008-06-24. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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