Method of fabricating nitride-based semiconductor laser diode
文献类型：专利
| 作者 | SAKONG, TAN; SUNG, YOUN-JOON; PAEK, HO-SUN |
| 发表日期 | 2010-06-15 |
| 专利号 | US7736925 |
| 著作权人 | SAMSUNG ELECTRONICS CO., LTD. |
| 国家 | 美国 |
| 文献子类 | 授权发明 |
| 其他题名 | Method of fabricating nitride-based semiconductor laser diode |
| 英文摘要 | A method of manufacturing a nitride-based semiconductor laser diode that can minimize optical absorption on a cavity mirror plane and improve the surface roughness of the cavity mirror plane is provided. The method includes the steps of: forming on a (0001) GaN (gallium nitride) substrate having at least two masks spaced apart by a distance equal to a laser cavity length in stripes that extend along the <11-20> direction; growing an n-GaN layer on the GaN substrate between the masks so that two (1-100) edges of the n-GaN layer are thicker than the remaining regions thereof; sequentially stacking an n-clad layer, an active layer, and a p-clad layer on the n-GaN layer to form an edge-emitting laser cavity structure in which laser light generated in the active layer passes through a region of the n-clad layer aligned laterally with the active layer and is output; and etching a (1-100) plane of the laser cavity structure to form a cavity mirror plane. |
| 公开日期 | 2010-06-15 |
| 申请日期 | 2006-06-08 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/38305]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | SAMSUNG ELECTRONICS CO., LTD. |
| 推荐引用方式 GB/T 7714 | SAKONG, TAN,SUNG, YOUN-JOON,PAEK, HO-SUN. Method of fabricating nitride-based semiconductor laser diode. US7736925. 2010-06-15. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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