Nitride semiconductor laser element and method for manufacturing the same
文献类型：专利
| 作者 | KAMIKAWA, TAKESHI; KAWAGUCHI, YOSHINOBU |
| 发表日期 | 2010-04-06 |
| 专利号 | US7691653 |
| 著作权人 | SHARP KABUSHIKI KAISHA |
| 国家 | 美国 |
| 文献子类 | 授权发明 |
| 其他题名 | Nitride semiconductor laser element and method for manufacturing the same |
| 英文摘要 | A substrate with a nitride semiconductor layer is cleaved to form resonator end faces, on which a coating film is formed so as to make a nitride semiconductor laser bar. This is divided into nitride semiconductor laser elements. Prior to forming the coating film on the resonator end face, the resonator end face is exposed to a plasma atmosphere generated from the gas containing nitrogen gas. When a ratio of nitrogen to gallium in the surface of the resonator end face before the exposure is represented by “a”, an average value of ratios of nitrogen to gallium inside from the surface of the resonator end face before the exposure is represented by “b”, a ratio of nitrogen to gallium in the surface of the resonator end face after the exposure to the first plasma atmosphere is represented by “d”, and an average value of ratios of nitrogen to gallium inside from the surface of the resonator end face after the exposure is represented by “e”, the value “g” that is expressed by g=(b·d)/(a·e) is set to a value that satisfies g≧0.8. |
| 公开日期 | 2010-04-06 |
| 申请日期 | 2006-08-08 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/38308]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | SHARP KABUSHIKI KAISHA |
| 推荐引用方式 GB/T 7714 | KAMIKAWA, TAKESHI,KAWAGUCHI, YOSHINOBU. Nitride semiconductor laser element and method for manufacturing the same. US7691653. 2010-04-06. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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