Process for controlling indium clustering in ingan leds using strain arrays
文献类型：专利
| 作者 | HERSEE, STEPHEN D. |
| 发表日期 | 2010-02-23 |
| 专利号 | US7666696 |
| 著作权人 | STC.UNM |
| 国家 | 美国 |
| 文献子类 | 授权发明 |
| 其他题名 | Process for controlling indium clustering in ingan leds using strain arrays |
| 英文摘要 | Exemplary embodiments provide MQW semiconductor devices and methods for their manufacture. The MQW semiconductor devices can be formed by growing a MQW active region over a nanoscale periodic strain array. By using the nanoscale periodic strain array, the position, size, and composition of the In-rich clusters in the MQW active region can be controlled. This control of In-rich clusters can result in tighter wavelength control, which can be important for applications, such as, for example, lasers and LEDs. |
| 公开日期 | 2010-02-23 |
| 申请日期 | 2006-11-08 |
| 状态 | 授权 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/38317]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | STC.UNM |
| 推荐引用方式 GB/T 7714 | HERSEE, STEPHEN D.. Process for controlling indium clustering in ingan leds using strain arrays. US7666696. 2010-02-23. |
入库方式： OAI收割
来源：西安光学精密机械研究所
浏览0
下载0
收藏0
其他版本
除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。