中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
Process for controlling indium clustering in ingan leds using strain arrays

文献类型:专利

作者HERSEE, STEPHEN D.
发表日期2010-02-23
专利号US7666696
著作权人STC.UNM
国家美国
文献子类授权发明
其他题名Process for controlling indium clustering in ingan leds using strain arrays
英文摘要Exemplary embodiments provide MQW semiconductor devices and methods for their manufacture. The MQW semiconductor devices can be formed by growing a MQW active region over a nanoscale periodic strain array. By using the nanoscale periodic strain array, the position, size, and composition of the In-rich clusters in the MQW active region can be controlled. This control of In-rich clusters can result in tighter wavelength control, which can be important for applications, such as, for example, lasers and LEDs.
公开日期2010-02-23
申请日期2006-11-08
状态授权
源URL[http://ir.opt.ac.cn/handle/181661/38317]  
专题半导体激光器专利数据库
作者单位STC.UNM
推荐引用方式
GB/T 7714
HERSEE, STEPHEN D.. Process for controlling indium clustering in ingan leds using strain arrays. US7666696. 2010-02-23.

入库方式: OAI收割

来源:西安光学精密机械研究所

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