Quantum dot laser diode and method of manufacturing the same
文献类型：专利
| 作者 | KIM, JIN SOO; LEE, JIN HONG; HONG, SUNG UI; KWACK, HO SANG; CHOI, BYUNG SEOK; OH, DAE KON |
| 发表日期 | 2009-08-18 |
| 专利号 | US7575943 |
| 著作权人 | ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTITUTE |
| 国家 | 美国 |
| 文献子类 | 授权发明 |
| 其他题名 | Quantum dot laser diode and method of manufacturing the same |
| 英文摘要 | Provided are a quantum dot laser diode and a method of manufacturing the same. The method of manufacturing a quantum dot laser diode includes the steps of: forming a grating structure layer including a plurality of gratings on a substrate; forming a first lattice-matched layer on the grating structure layer; forming at least one quantum dot layer having at least one quantum dot on the first lattice-matched layer; forming a second lattice-matched layer on the quantum dot layer; forming a cladding layer on the second lattice-matched layer; and forming an ohmic contact layer on the cladding layer. Consequently, it is possible to obtain high gain at a desired wavelength without affecting the uniformity of quantum dots, so that the characteristics of a laser diode can be improved. |
| 公开日期 | 2009-08-18 |
| 申请日期 | 2006-12-01 |
| 状态 | 授权 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/38319]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTITUTE |
| 推荐引用方式 GB/T 7714 | KIM, JIN SOO,LEE, JIN HONG,HONG, SUNG UI,et al. Quantum dot laser diode and method of manufacturing the same. US7575943. 2009-08-18. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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