Method for producing semiconductor optical device
文献类型：专利
| 作者 | YAMAZAKI, KOUICHIRO; HIRATSUKA, KENJI |
| 发表日期 | 2008-11-25 |
| 专利号 | US7456040 |
| 著作权人 | SUMITOMO ELECTRIC INDUSTRIES, LTD. |
| 国家 | 美国 |
| 文献子类 | 授权发明 |
| 其他题名 | Method for producing semiconductor optical device |
| 英文摘要 | The present invention is to provide a method for manufacturing a semiconductor optical device, in which the unevenness of the burying of the mesa structure may be reduced. The process is configured to form a mask extending along [011] direction on the cap layer, to form a mesa structure by etching the upper cladding layer made of InP, the active region, and the lower cladding layer, to form a surfaces with the (01-1) and the (0-11) planes on both sides of the mesa structure, respectively, by causing the mass transportation, and finally to form the blocking layer by using the mask formed in advance. A semiconductor region with the second conduction type, which is the same with that of the upper cladding layer and is different from that of the lower cladding layer, is grown on the upper cladding layer after removing the mask and the cap layer. |
| 公开日期 | 2008-11-25 |
| 申请日期 | 2006-12-11 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/38322]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | SUMITOMO ELECTRIC INDUSTRIES, LTD. |
| 推荐引用方式 GB/T 7714 | YAMAZAKI, KOUICHIRO,HIRATSUKA, KENJI. Method for producing semiconductor optical device. US7456040. 2008-11-25. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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