Method for forming underlayer composed of GaN-based compound semiconductor, GaN-based semiconductor light-emitting element, and method for manufacturing GaN-based semiconductor light-emitting element
文献类型：专利
| 作者 | OKUYAMA, HIROYUKI |
| 发表日期 | 2008-11-18 |
| 专利号 | US7452789 |
| 著作权人 | SONY CORPORATION |
| 国家 | 美国 |
| 文献子类 | 授权发明 |
| 其他题名 | Method for forming underlayer composed of GaN-based compound semiconductor, GaN-based semiconductor light-emitting element, and method for manufacturing GaN-based semiconductor light-emitting element |
| 英文摘要 | A method for forming an underlayer composed of a GaN-based compound semiconductor is provided. In this method, at the time of epitaxial growth of an underlayer on the surface of a sapphire substrate, no gap is generated between the underlayer and the surface of the sapphire substrate. The method for forming an underlayer composed of a GaN-based compound semiconductor includes the steps of forming strip seed layers composed of a GaN-based compound semiconductor on the surface of a sapphire substrate, forming a crystal growth promoting layer composed of a GaN-based compound semiconductor on the top surfaces and both the side surfaces of the seed layers, and on the exposed surfaces of the sapphire substrate, and epitaxially growing an underlayer composed of a GaN-based compound semiconductor from the parts of the crystal growth promoting layer. |
| 公开日期 | 2008-11-18 |
| 申请日期 | 2007-01-05 |
| 状态 | 授权 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/38326]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | SONY CORPORATION |
| 推荐引用方式 GB/T 7714 | OKUYAMA, HIROYUKI. Method for forming underlayer composed of GaN-based compound semiconductor, GaN-based semiconductor light-emitting element, and method for manufacturing GaN-based semiconductor light-emitting element. US7452789. 2008-11-18. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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