Method for manufacturing semiconductor laser element
文献类型：专利
| 作者 | NAGIRA, TAKASHI; WATATANI, CHIKARA |
| 发表日期 | 2009-06-23 |
| 专利号 | US7550304 |
| 著作权人 | MITSUBISHI ELECTRIC CORPORATION |
| 国家 | 美国 |
| 文献子类 | 授权发明 |
| 其他题名 | Method for manufacturing semiconductor laser element |
| 英文摘要 | A method for manufacturing a semiconductor laser element includes forming a semiconductor laminated structure, having an active layer, on a substrate; etching the semiconductor laminated structure to form a mesa; exposing the mesa to an oxygen-containing ambient forming an oxide layer on the mesa; removing a first part of the oxide layer from the mesa at a temperature lower than a critical temperature at which bonds between atoms of the oxide layer become stronger, by etching with a gas; removing the remainder of the oxide layer from the mesa at a temperature higher than the critical temperature by etching with a gas; and forming a burying layer coating the mesa. |
| 公开日期 | 2009-06-23 |
| 申请日期 | 2007-01-19 |
| 状态 | 授权 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/38329]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | MITSUBISHI ELECTRIC CORPORATION |
| 推荐引用方式 GB/T 7714 | NAGIRA, TAKASHI,WATATANI, CHIKARA. Method for manufacturing semiconductor laser element. US7550304. 2009-06-23. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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