Flip-chip nitride light emitting device and method of manufacturing thereof
文献类型：专利
| 作者 | SEONG, TAE-YEON; SONG, JUNE-O |
| 发表日期 | 2009-02-17 |
| 专利号 | US7491564 |
| 著作权人 | SAMSUNG ELECTRONICS CO., LTD. |
| 国家 | 美国 |
| 文献子类 | 授权发明 |
| 其他题名 | Flip-chip nitride light emitting device and method of manufacturing thereof |
| 英文摘要 | A flip-chip light emitting device and a method of manufacturing thereof are provided. The flip-chip nitride light emitting device includes a substrate, an n type clad layer, an active layer, a p type clad layer, a multi ohmic contact layer, and a reflective layer, which are stacked in this order, wherein the multi ohmic contact layer is obtained by repeatedly stacking at least one stack unit of a reforming metal layer and a transparent conductive thin film, and wherein the reforming metal layer mainly contains silver (Ag). According to the flip-chip light emitting device and the method of manufacturing thereof, since the ohmic contact characteristics associated with a p type clad layer can be improved, it is possible to increase wire bonding efficiency and yield in a packaging process. In addition, since a low non-contact resistance and a good current-voltage characteristic can be obtained, it is possible to improve light emitting efficiency and to expand life time of the flip-chip light emitting device. |
| 公开日期 | 2009-02-17 |
| 申请日期 | 2007-01-26 |
| 状态 | 授权 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/38331]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | SAMSUNG ELECTRONICS CO., LTD. |
| 推荐引用方式 GB/T 7714 | SEONG, TAE-YEON,SONG, JUNE-O. Flip-chip nitride light emitting device and method of manufacturing thereof. US7491564. 2009-02-17. |
入库方式： OAI收割
来源：西安光学精密机械研究所
浏览0
下载0
收藏0
其他版本
除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。