Integrated optoelectronic device and method of fabricating the same
文献类型：专利
| 作者 | SHINODA, KAZUNORI; SHIOTA, TAKASHI; TSUCHIYA, TOMONOBU; KITATANI, TAKESHI; AOKI, MASAHIRO |
| 发表日期 | 2008-03-04 |
| 专利号 | US7340142 |
| 著作权人 | LUMENTUM JAPAN, INC. |
| 国家 | 美国 |
| 文献子类 | 授权发明 |
| 其他题名 | Integrated optoelectronic device and method of fabricating the same |
| 英文摘要 | An integrated optoelectronic device includes optical waveguide elements containing InGaAlAs as a principal component, formed on an InP substrate and connected in an end-to-end fashion by butt jointing. An InGaAsP layer is formed on the InP substrate to suppress the mass transport of InP during the fabrication of the integrated optoelectronic device. The InGaAsP layer is formed before the InP substrate is heated at a crystal growth temperature on the order of 700° C. to form the InGaAlAs optical waveguide element. |
| 公开日期 | 2008-03-04 |
| 申请日期 | 2007-02-02 |
| 状态 | 授权 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/38334]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | LUMENTUM JAPAN, INC. |
| 推荐引用方式 GB/T 7714 | SHINODA, KAZUNORI,SHIOTA, TAKASHI,TSUCHIYA, TOMONOBU,et al. Integrated optoelectronic device and method of fabricating the same. US7340142. 2008-03-04. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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