Laser facet pre-coating etch for controlling leakage current
文献类型：专利
| 作者 | DIMITROV, ROMAN; VERMA, ASHISH; SUDO, TSURUGI; LEHMANN, SCOTT |
| 发表日期 | 2010-07-27 |
| 专利号 | US7763485 |
| 著作权人 | FINISAR CORPORATION |
| 国家 | 美国 |
| 文献子类 | 授权发明 |
| 其他题名 | Laser facet pre-coating etch for controlling leakage current |
| 英文摘要 | A method for etching facets of a laser die prior to coating in such a way as to control the formation of oxides and metallic films on the facet is disclosed. In one embodiment, the method includes placing a wafer on which the laser is included in the interior volume of an etching chamber. Nitrogen is introduced into the interior volume to define a nitrogen-rich environment. The laser facet is then etched in the nitrogen-rich environment with argon delivered from an ion gun. In another embodiment, the method includes placing the laser in an ion beam etching chamber, then physically etching the facet of the laser with an ion beam that includes an argon/nitrogen mixture. The laser facet(s) can then be coated as desired. The etching method reduces the incidence of leakage current during operation of the laser die caused by metallic film formation on the facet before coating. |
| 公开日期 | 2010-07-27 |
| 申请日期 | 2007-05-15 |
| 状态 | 授权 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/38351]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | FINISAR CORPORATION |
| 推荐引用方式 GB/T 7714 | DIMITROV, ROMAN,VERMA, ASHISH,SUDO, TSURUGI,et al. Laser facet pre-coating etch for controlling leakage current. US7763485. 2010-07-27. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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