Epitaxial regrowth in a distributed feedback laser
文献类型：专利
| 作者 | HA, YUK LUNG; YOUNG, DAVID BRUCE; VERMA, ASHISH; DIMITROV, ROMAN |
| 发表日期 | 2011-10-11 |
| 专利号 | US8034648 |
| 著作权人 | FINISAR CORPORATION |
| 国家 | 美国 |
| 文献子类 | 授权发明 |
| 其他题名 | Epitaxial regrowth in a distributed feedback laser |
| 英文摘要 | Optimizing the regrowth over epitaxial layers during manufacture of a distributed feedback laser. In one example embodiment, a method for depositing an InP regrowth layer on an epitaxial base portion of a distributed feedback laser includes growing a first portion of the regrowth layer at an initial substrate temperature of approximately 580 degrees Celsius to a thickness between approximately 300 Angstroms and approximately 900 Angstroms, increasing the substrate temperature from the initial substrate temperature to an increased substrate temperature of approximately 660 degrees Celsius, growing a second portion of the regrowth layer at the increased substrate temperature, doping a first part of an uppermost layer of the regrowth layer at a concentration of approximately 8.00*10^17/cm3 at the increased substrate temperature, and doping a second part of the uppermost layer of the regrowth layer at a concentration between approximately 90*10^18/cm3 and approximately 2.00*10^18/cm3 at the increased substrate temperature. |
| 公开日期 | 2011-10-11 |
| 申请日期 | 2007-05-15 |
| 状态 | 授权 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/38353]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | FINISAR CORPORATION |
| 推荐引用方式 GB/T 7714 | HA, YUK LUNG,YOUNG, DAVID BRUCE,VERMA, ASHISH,et al. Epitaxial regrowth in a distributed feedback laser. US8034648. 2011-10-11. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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