Method of manufacturing nitride-based semiconductor light-emitting device
文献类型：专利
| 作者 | KIM, KYOUNG-KOOK; CHOI, KWANG-KI; SONG, JUNE-O; YOON, SUK-HO; BAIK, KWANG-HYEON; KIM, HYUN-SOO |
| 发表日期 | 2011-08-02 |
| 专利号 | US7989244 |
| 著作权人 | SAMSUNG ELECTRONICS CO., LTD. |
| 国家 | 美国 |
| 文献子类 | 授权发明 |
| 其他题名 | Method of manufacturing nitride-based semiconductor light-emitting device |
| 英文摘要 | Provided is a method of manufacturing a nitride-based semiconductor light-emitting device having increased efficiency and increased output properties. The method may include forming a sacrificial layer having a wet etching property on a substrate, forming a protective layer on the sacrificial layer, protecting the sacrificial layer in a reaction gas atmosphere for crystal growth, and facilitating epitaxial growth of a semiconductor layer to be formed on the protective layer, forming a semiconductor device including an n-type semiconductor layer, an active layer, and a p-type semiconductor layer on the protective layer, and removing the substrate from the semiconductor device by wet etching the sacrificial layer. |
| 公开日期 | 2011-08-02 |
| 申请日期 | 2007-05-23 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/38358]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | SAMSUNG ELECTRONICS CO., LTD. |
| 推荐引用方式 GB/T 7714 | KIM, KYOUNG-KOOK,CHOI, KWANG-KI,SONG, JUNE-O,et al. Method of manufacturing nitride-based semiconductor light-emitting device. US7989244. 2011-08-02. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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