Nitride-based semiconductor light emitting device and method of manufacturing the same
文献类型：专利
| 作者 | YOON, SUK-HO; JIN, SUNG-HO; KIM, KYOUNG-KOOK; LEE, JEONG-WOOK |
| 发表日期 | 2011-01-18 |
| 专利号 | US7871845 |
| 著作权人 | SAMSUNG ELECTRONICS CO., LTD. |
| 国家 | 美国 |
| 文献子类 | 授权发明 |
| 其他题名 | Nitride-based semiconductor light emitting device and method of manufacturing the same |
| 英文摘要 | Provided is a nitride-based semiconductor light emitting device having increased efficiency and power characteristics and method of manufacturing the same. The method may include forming a sacrificial layer on a substrate, forming a passivation layer on the sacrificial layer, forming a plurality of masking dots of a metal nitride on the passivation layer, laterally epitaxially growing a nitride-based semiconductor layer on the passivation layer using the masking dots as masks, forming a semiconductor device on the nitride-based semiconductor layer, and wet etching the sacrificial layer to separate and/or remove the substrate from the semiconductor device. |
| 公开日期 | 2011-01-18 |
| 申请日期 | 2007-06-08 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/38362]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | SAMSUNG ELECTRONICS CO., LTD. |
| 推荐引用方式 GB/T 7714 | YOON, SUK-HO,JIN, SUNG-HO,KIM, KYOUNG-KOOK,et al. Nitride-based semiconductor light emitting device and method of manufacturing the same. US7871845. 2011-01-18. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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