Gallium nitride-on-silicon interface using multiple aluminum compound buffer layers
文献类型:专利
作者 | LI, TINGKAI; TWEET, DOUGLAS J.; MAA, JER-SHEN; HSU, SHENG TENG |
发表日期 | 2009-10-06 |
专利号 | US7598108 |
著作权人 | SHARP KABUSHIKI KAISHA |
国家 | 美国 |
文献子类 | 授权发明 |
其他题名 | Gallium nitride-on-silicon interface using multiple aluminum compound buffer layers |
英文摘要 | A thermal expansion interface between silicon (Si) and gallium nitride (GaN) films using multiple buffer layers of aluminum compounds has been provided, along with an associated fabrication method. The method provides a (111) Si substrate and deposits a first layer of AlN overlying the substrate by heating the substrate to a relatively high temperature of 1000 to 1200° C. A second layer of AlN is deposited overlying the first layer of AlN at a lower temperature of 500 to 800° C. A third layer of AlN is deposited overlying the second layer of AlN by heating the substrate to the higher temperature range. Then, a grading Al1-XGaXN layer is formed overlying the third layer of AlN, where 0 |
公开日期 | 2009-10-06 |
申请日期 | 2007-07-06 |
状态 | 失效 |
源URL | [http://ir.opt.ac.cn/handle/181661/38363] ![]() |
专题 | 半导体激光器专利数据库 |
作者单位 | SHARP KABUSHIKI KAISHA |
推荐引用方式 GB/T 7714 | LI, TINGKAI,TWEET, DOUGLAS J.,MAA, JER-SHEN,et al. Gallium nitride-on-silicon interface using multiple aluminum compound buffer layers. US7598108. 2009-10-06. |
入库方式: OAI收割
来源:西安光学精密机械研究所
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