中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
Gallium nitride-on-silicon interface using multiple aluminum compound buffer layers

文献类型:专利

作者LI, TINGKAI; TWEET, DOUGLAS J.; MAA, JER-SHEN; HSU, SHENG TENG
发表日期2009-10-06
专利号US7598108
著作权人SHARP KABUSHIKI KAISHA
国家美国
文献子类授权发明
其他题名Gallium nitride-on-silicon interface using multiple aluminum compound buffer layers
英文摘要A thermal expansion interface between silicon (Si) and gallium nitride (GaN) films using multiple buffer layers of aluminum compounds has been provided, along with an associated fabrication method. The method provides a (111) Si substrate and deposits a first layer of AlN overlying the substrate by heating the substrate to a relatively high temperature of 1000 to 1200° C. A second layer of AlN is deposited overlying the first layer of AlN at a lower temperature of 500 to 800° C. A third layer of AlN is deposited overlying the second layer of AlN by heating the substrate to the higher temperature range. Then, a grading Al1-XGaXN layer is formed overlying the third layer of AlN, where 0
公开日期2009-10-06
申请日期2007-07-06
状态失效
源URL[http://ir.opt.ac.cn/handle/181661/38363]  
专题半导体激光器专利数据库
作者单位SHARP KABUSHIKI KAISHA
推荐引用方式
GB/T 7714
LI, TINGKAI,TWEET, DOUGLAS J.,MAA, JER-SHEN,et al. Gallium nitride-on-silicon interface using multiple aluminum compound buffer layers. US7598108. 2009-10-06.

入库方式: OAI收割

来源:西安光学精密机械研究所

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