Method for manufacturing semiconductor optical device
文献类型：专利
| 作者 | KAWASAKI, KAZUSHIGE; OKA, TAKAFUMI; SHIOZAWA, KATSUOMI |
| 发表日期 | 2008-11-25 |
| 专利号 | US7456039 |
| 著作权人 | MITSUBISHI ELECTRIC CORPORATION |
| 国家 | 美国 |
| 文献子类 | 授权发明 |
| 其他题名 | Method for manufacturing semiconductor optical device |
| 英文摘要 | An SiO2 film is formed on a semiconductor layer stack, the SiO2 film having a thickness da and an etch rate Ra in buffered (BHF). A waveguide ridge with the SiO2 film thereon is formed using a resist pattern 76. An SiN film is formed on top and both sides of the waveguide ridge, while leaving the resist pattern in place, the SiN film having a thickness db and an etch rate Rb in BHF, where 1<(db/Rb)/(da/Ra). Then the resist pattern and the overlying portion of the SiN film are removed by lift-off to form an opening in the SiN film. Wet etching for a predetermined period of time with BHF removes the SiO2 film from the waveguide ridge, while leaving the SiN film in place. |
| 公开日期 | 2008-11-25 |
| 申请日期 | 2007-11-29 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/38436]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | MITSUBISHI ELECTRIC CORPORATION |
| 推荐引用方式 GB/T 7714 | KAWASAKI, KAZUSHIGE,OKA, TAKAFUMI,SHIOZAWA, KATSUOMI. Method for manufacturing semiconductor optical device. US7456039. 2008-11-25. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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