Al(x)Ga(1-x)N-cladding-free nonpolar III-nitride based laser diodes and light emitting diodes
文献类型：专利
| 作者 | FEEZELL, DANIEL F.; SCHMIDT, MATHEW C.; KIM, KWANG-CHOONG; FARRELL, ROBERT M.; COHEN, DANIEL A.; SPECK, JAMES S.; DENBAARS, STEVEN P.; NAKAMURA, SHUJI |
| 发表日期 | 2012-07-03 |
| 专利号 | US8211723 |
| 著作权人 | THE REGENTS OF THE UNIVERSITY OF CALIFORNIA |
| 国家 | 美国 |
| 文献子类 | 授权发明 |
| 其他题名 | Al(x)Ga(1-x)N-cladding-free nonpolar III-nitride based laser diodes and light emitting diodes |
| 英文摘要 | A method for fabricating AlxGa1-xN-cladding-free nonpolar III-nitride based laser diodes or light emitting diodes. Due to the absence of polarization fields in the nonpolar crystal planes, these nonpolar devices have thick quantum wells that function as an optical waveguide to effectively confine the optical mode to the active region and eliminate the need for Al-containing waveguide cladding layers. |
| 公开日期 | 2012-07-03 |
| 申请日期 | 2008-02-12 |
| 状态 | 授权 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/38445]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | THE REGENTS OF THE UNIVERSITY OF CALIFORNIA |
| 推荐引用方式 GB/T 7714 | FEEZELL, DANIEL F.,SCHMIDT, MATHEW C.,KIM, KWANG-CHOONG,et al. Al(x)Ga(1-x)N-cladding-free nonpolar III-nitride based laser diodes and light emitting diodes. US8211723. 2012-07-03. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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