Method for manufacturing photoelectric conversion device
文献类型：专利
| 作者 | YAMAZAKI, SHUNPEI; ARAI, YASUYUKI |
| 发表日期 | 2012-06-26 |
| 专利号 | US8207010 |
| 著作权人 | SEMICONDUCTOR ENERGY LABORATORY CO., LTD. |
| 国家 | 美国 |
| 文献子类 | 授权发明 |
| 其他题名 | Method for manufacturing photoelectric conversion device |
| 英文摘要 | It is an object to form a high-quality crystalline semiconductor layer directly over a large-sized substrate with high productivity without reducing the deposition rate and to provide a photoelectric conversion device in which the crystalline semiconductor layer is used as a photoelectric conversion layer. A photoelectric conversion layer formed of a semi-amorphous semiconductor is formed over a substrate as follows: a reaction gas is introduced into a treatment chamber where the substrate is placed; and a microwave is introduced into the treatment chamber through a slit provided for a waveguide that is disposed in approximately parallel to and opposed to the substrate, thereby generating plasma. By forming a photoelectric conversion layer using such a semi-amorphous semiconductor, a rate of deterioration in characteristics by light deterioration is decreased from one-fifth to one-tenth, and thus a photoelectric conversion device that has almost no problems for practical use can be obtained. |
| 公开日期 | 2012-06-26 |
| 申请日期 | 2008-05-23 |
| 状态 | 授权 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/38461]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | SEMICONDUCTOR ENERGY LABORATORY CO., LTD. |
| 推荐引用方式 GB/T 7714 | YAMAZAKI, SHUNPEI,ARAI, YASUYUKI. Method for manufacturing photoelectric conversion device. US8207010. 2012-06-26. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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