Light-emitting device with a protection layer to prevent the inter-diffusion of zinc (Zn) atoms
文献类型:专利
| 作者 | TAKAHASHI, MITSUO; HIRATSUKA, KENJI; KUMAGAI, AKIKO |
| 发表日期 | 2010-10-05 |
| 专利号 | US7807489 |
| 著作权人 | SUMITOMO ELECTRIC INDUSTRIES, LTD. |
| 国家 | 美国 |
| 文献子类 | 授权发明 |
| 其他题名 | Light-emitting device with a protection layer to prevent the inter-diffusion of zinc (Zn) atoms |
| 英文摘要 | A light-emitting device with a protection layer for Zn inter-diffusion and a process to form the device are described. The device of the invention provides an active layer containing aluminum (Al) as a group III element, typically AlGaInAs, and protection layers containing silicon (Si) to prevent the inter-diffusion of zing (Zn) atoms contained in p-type layers surrounding the active layer. One of protection layers is put between the active layer and the p-type cladding layer, while, the other of protection layers is disposed between the active layer and the p-type burying layer. |
| 公开日期 | 2010-10-05 |
| 申请日期 | 2008-06-18 |
| 状态 | 授权 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/38462] ![]() |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | SUMITOMO ELECTRIC INDUSTRIES, LTD. |
| 推荐引用方式 GB/T 7714 | TAKAHASHI, MITSUO,HIRATSUKA, KENJI,KUMAGAI, AKIKO. Light-emitting device with a protection layer to prevent the inter-diffusion of zinc (Zn) atoms. US7807489. 2010-10-05. |
入库方式: OAI收割
来源:西安光学精密机械研究所
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