Nitride semiconductor light emitting device, method of manufacturing nitride semiconductor light emitting device, and nitride semiconductor transistor device
文献类型：专利
| 作者 | KAMIKAWA, TAKESHI; KAWAGUCHI, YOSHINOBU |
| 发表日期 | 2011-11-29 |
| 专利号 | US8067255 |
| 著作权人 | SHARP KABUSHIKI KAISHA |
| 国家 | 美国 |
| 文献子类 | 授权发明 |
| 其他题名 | Nitride semiconductor light emitting device, method of manufacturing nitride semiconductor light emitting device, and nitride semiconductor transistor device |
| 英文摘要 | Provided are a nitride semiconductor light emitting device including a coat film formed at a light emitting portion and including an aluminum nitride crystal or an aluminum oxynitride crystal, and a method of manufacturing the nitride semiconductor light emitting device. Also provided is a nitride semiconductor transistor device including a nitride semiconductor layer and a gate insulating film which is in contact with the nitride semiconductor layer and includes an aluminium nitride crystal or an aluminum oxynitride crystal. |
| 公开日期 | 2011-11-29 |
| 申请日期 | 2008-06-23 |
| 状态 | 授权 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/38465]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | SHARP KABUSHIKI KAISHA |
| 推荐引用方式 GB/T 7714 | KAMIKAWA, TAKESHI,KAWAGUCHI, YOSHINOBU. Nitride semiconductor light emitting device, method of manufacturing nitride semiconductor light emitting device, and nitride semiconductor transistor device. US8067255. 2011-11-29. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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