Bottom emitting vertical-cavity surface-emitting lasers
文献类型：专利
| 作者 | MATHAI, SAGI VARGHESE; CHEUNG, STANLEY; SORIN, WAYNE V.; TAN, MICHAEL RENNE TY |
| 发表日期 | 2019-05-14 |
| 专利号 | US10290996 |
| 著作权人 | HEWLETT PACKARD ENTERPRISE DEVELOPMENT LP |
| 国家 | 美国 |
| 文献子类 | 授权发明 |
| 其他题名 | Bottom emitting vertical-cavity surface-emitting lasers |
| 英文摘要 | A bottom-emitting vertical-cavity surface-emitting laser (VCSEL) structure includes a first substrate permitting the passage of light therethrough, an n-doped distributed Bragg reflector (nDBR), a p-doped distributed Bragg reflector (pDBR), one or more active layers, at least one of a high contrast grating mirror and a dielectric-enhanced metal mirror, and a plurality of layers, where the VCSEL structure is configured to be flip chipped to a second substrate. The pDBR and the nDBR define a laser cavity extending vertically therebetween and containing the one or more active layers. The at least one of a high contrast grating mirror and a dielectric-enhanced metal mirror may be disposed over the pDBR. The plurality of layers may be disposed over the at least one of the high contrast grating mirror and the dielectric-enhanced metal mirror to optically and hermetically seal the laser cavity. |
| 公开日期 | 2019-05-14 |
| 申请日期 | 2018-04-25 |
| 状态 | 授权 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/38470]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | HEWLETT PACKARD ENTERPRISE DEVELOPMENT LP |
| 推荐引用方式 GB/T 7714 | MATHAI, SAGI VARGHESE,CHEUNG, STANLEY,SORIN, WAYNE V.,et al. Bottom emitting vertical-cavity surface-emitting lasers. US10290996. 2019-05-14. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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