Top-emitting nitride-based light emitting device and method of manufacturing the same
文献类型：专利
| 作者 | SONG, JUNE-O; SEONG, TAE-YEON; KWAK, JOON-SEOP; HONG, WOONG-KI |
| 发表日期 | 2010-02-23 |
| 专利号 | US7666693 |
| 著作权人 | SAMSUNG ELECTRONICS CO., LTD. |
| 国家 | 美国 |
| 文献子类 | 授权发明 |
| 其他题名 | Top-emitting nitride-based light emitting device and method of manufacturing the same |
| 英文摘要 | Provided are a top-emitting N-based light emitting device and a method of manufacturing the same. The device includes a substrate, an n-type clad layer, an active layer, a p-type clad layer, and a multi ohmic contact layer, which are sequentially stacked. The multi ohmic contact layer includes one or more stacked structures, each including a modified metal layer and a transparent conductive thin film layer, which are repetitively stacked on the p-type clad layer. The modified metal layer is formed of an Ag-based material. |
| 公开日期 | 2010-02-23 |
| 申请日期 | 2008-07-25 |
| 状态 | 授权 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/38471]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | SAMSUNG ELECTRONICS CO., LTD. |
| 推荐引用方式 GB/T 7714 | SONG, JUNE-O,SEONG, TAE-YEON,KWAK, JOON-SEOP,et al. Top-emitting nitride-based light emitting device and method of manufacturing the same. US7666693. 2010-02-23. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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