Method for manufacturing semiconductor laser device and method for inspecting semiconductor laser bar
文献类型：专利
| 作者 | KASHIMA, TAKAYUKI; ITO, KEIJI; MAKITA, KOUJI |
| 发表日期 | 2009-09-08 |
| 专利号 | US7585689 |
| 著作权人 | PANASONIC CORPORATION |
| 国家 | 美国 |
| 文献子类 | 授权发明 |
| 其他题名 | Method for manufacturing semiconductor laser device and method for inspecting semiconductor laser bar |
| 英文摘要 | A method for manufacturing a semiconductor laser device in which a first conductivity type cladding layer, and active layer, a second conductivity type first cladding layer, and a second conductivity type second cladding layer are laminated in this order on a semiconductor substrate by crystal growth, the second conductivity type second cladding layer is processed into a plurality of stripe-shaped ridge structure portions, and a laser bar is formed by cleavage in a direction orthogonal to a longitudinal direction of the ridge structure portions. According to this method, it is possible to provide a method for manufacturing a semiconductor laser device and a method for inspecting a semiconductor laser bar in the manufacturing process, capable of determining for each chip whether or not a deviation of a resonator length is within the tolerance in a simple manner. |
| 公开日期 | 2009-09-08 |
| 申请日期 | 2008-08-22 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/38473]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | PANASONIC CORPORATION |
| 推荐引用方式 GB/T 7714 | KASHIMA, TAKAYUKI,ITO, KEIJI,MAKITA, KOUJI. Method for manufacturing semiconductor laser device and method for inspecting semiconductor laser bar. US7585689. 2009-09-08. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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