Method of manufacturing nitride-composite semiconductor laser element, with disclocation control
文献类型：专利
| 作者 | ITO, SHIGETOSHI; YUASA, TAKAYUKI; UETA, YOSHIHIRO; TANEYA, MOTOTAKA; TANI, ZENPEI; MOTOKI, KENSAKU |
| 发表日期 | 2010-08-24 |
| 专利号 | US7781244 |
| 著作权人 | SHARP KABUSHIKI KAISHA |
| 国家 | 美国 |
| 文献子类 | 授权发明 |
| 其他题名 | Method of manufacturing nitride-composite semiconductor laser element, with disclocation control |
| 英文摘要 | A nitride semiconductor laser device with a reduction in internal crystal defects and an alleviation in stress, and a semiconductor optical apparatus comprising this nitride semiconductor laser device. First, a growth suppressing film against GaN crystal growth is formed on the surface of an n-type GaN substrate equipped with alternate stripes of dislocation concentrated regions showing a high density of crystal defects and low-dislocation regions so as to coat the dislocation concentrate regions. Next, the n-type GaN substrate coated with the growth suppressing film is overlaid with a nitride semiconductor layer by the epitaxial growth of GaN crystals. Further, the growth suppressing film is removed to adjust the lateral distance between a laser waveguide region and the closest dislocation concentrated region to 40 μm or more. |
| 公开日期 | 2010-08-24 |
| 申请日期 | 2008-09-16 |
| 状态 | 授权 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/38479]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | SHARP KABUSHIKI KAISHA |
| 推荐引用方式 GB/T 7714 | ITO, SHIGETOSHI,YUASA, TAKAYUKI,UETA, YOSHIHIRO,et al. Method of manufacturing nitride-composite semiconductor laser element, with disclocation control. US7781244. 2010-08-24. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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