Method for manufacturing nitride semiconductor light-emitting element
文献类型：专利
| 作者 | KANAMOTO, KYOZO; SHIOZAWA, KATSUOMI; KAWASAKI, KAZUSHIGE; ABE, SHINJI; SAKUMA, HITOSHI |
| 发表日期 | 2011-06-21 |
| 专利号 | US7964424 |
| 著作权人 | MITSUBISHI ELECTRIC CORPORATION |
| 国家 | 美国 |
| 文献子类 | 授权发明 |
| 其他题名 | Method for manufacturing nitride semiconductor light-emitting element |
| 英文摘要 | A method for manufacturing a nitride semiconductor light-emitting element comprises: forming a semiconductor laminated structure wherein an n-type nitride semiconductor epitaxial layer, an active layer, and a p-type nitride semiconductor epitaxial layer are laminated on a substrate; forming a p-type electrode having a first electrode layer containing Pd and a second electrode layer containing Ta on the p-type nitride semiconductor epitaxial layer; heat treating at a temperature between 400° C. and 600° C. in ambient containing oxygen after forming the p-type electrode; and forming a pad electrode containing Au on the p-type electrode after the heat treating. |
| 公开日期 | 2011-06-21 |
| 申请日期 | 2008-11-05 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/38482]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | MITSUBISHI ELECTRIC CORPORATION |
| 推荐引用方式 GB/T 7714 | KANAMOTO, KYOZO,SHIOZAWA, KATSUOMI,KAWASAKI, KAZUSHIGE,et al. Method for manufacturing nitride semiconductor light-emitting element. US7964424. 2011-06-21. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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