Method of producing semiconductor optical device
文献类型：专利
| 作者 | HIRATSUKA, KENJI |
| 发表日期 | 2010-08-10 |
| 专利号 | US7772023 |
| 著作权人 | SUMITOMO ELECTRIC INDUSTRIES, LTD. |
| 国家 | 美国 |
| 文献子类 | 授权发明 |
| 其他题名 | Method of producing semiconductor optical device |
| 英文摘要 | Si atoms obtained by thermal decomposition of SiH4 are adsorbed in advance on one surface of a semiconductor substrate and side surfaces of a semiconductor mesa part. Thereby, prior to the growth of a buried layer, a diffusion protection layer composed of Si-doped InP with high impurity concentration is formed. As a result, when the buried layer is grown, Zn diffusing from an upper cladding layer is trapped by the diffusion protection layer, and interdiffusion between Zn and Fe is inhibited. Since the diffusion protection layer is formed uniformly at a small thickness of several monolayers, the diffusion protection layer is also inhibited from becoming a current leakage path. Consequently, the reliability of the semiconductor optical device can be improved. |
| 公开日期 | 2010-08-10 |
| 申请日期 | 2008-11-20 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/38485]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | SUMITOMO ELECTRIC INDUSTRIES, LTD. |
| 推荐引用方式 GB/T 7714 | HIRATSUKA, KENJI. Method of producing semiconductor optical device. US7772023. 2010-08-10. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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