中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
Method of manufacturing semiconductor optical element

文献类型:专利

作者KUSUNOKI, MASATSUGU; OKA, TAKAFUMI
发表日期2009-11-03
专利号US7611916
著作权人MITSUBISHI ELECTRIC CORPORATION
国家美国
文献子类授权发明
其他题名Method of manufacturing semiconductor optical element
英文摘要A method of manufacturing a semiconductor optical element, includes successively stacking a first semiconductor layer of a first conductivity type, an active layer, and a second semiconductor layer of a second conductivity type; applying a resist to the second semiconductor layer and patterning the resist into stripes by photolithography; forming recesses in the second semiconductor layer and a waveguide ridge adjacent to the recesses by dry-etching the second semiconductor layer only partially through the second semiconductor layer, using the resist as a mask; forming an insulating film on the waveguide ridge and in the recesses while leaving the resist; removing the insulating film from the resist so that the resist is exposed while the insulating film in the recess is left; removing the resist exposed; and forming an electrode on the waveguide ridge after removing the resist.
公开日期2009-11-03
申请日期2009-03-04
状态失效
源URL[http://ir.opt.ac.cn/handle/181661/38493]  
专题半导体激光器专利数据库
作者单位MITSUBISHI ELECTRIC CORPORATION
推荐引用方式
GB/T 7714
KUSUNOKI, MASATSUGU,OKA, TAKAFUMI. Method of manufacturing semiconductor optical element. US7611916. 2009-11-03.

入库方式: OAI收割

来源:西安光学精密机械研究所

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