Method of manufacturing semiconductor optical element
文献类型:专利
| 作者 | KUSUNOKI, MASATSUGU; OKA, TAKAFUMI |
| 发表日期 | 2009-11-03 |
| 专利号 | US7611916 |
| 著作权人 | MITSUBISHI ELECTRIC CORPORATION |
| 国家 | 美国 |
| 文献子类 | 授权发明 |
| 其他题名 | Method of manufacturing semiconductor optical element |
| 英文摘要 | A method of manufacturing a semiconductor optical element, includes successively stacking a first semiconductor layer of a first conductivity type, an active layer, and a second semiconductor layer of a second conductivity type; applying a resist to the second semiconductor layer and patterning the resist into stripes by photolithography; forming recesses in the second semiconductor layer and a waveguide ridge adjacent to the recesses by dry-etching the second semiconductor layer only partially through the second semiconductor layer, using the resist as a mask; forming an insulating film on the waveguide ridge and in the recesses while leaving the resist; removing the insulating film from the resist so that the resist is exposed while the insulating film in the recess is left; removing the resist exposed; and forming an electrode on the waveguide ridge after removing the resist. |
| 公开日期 | 2009-11-03 |
| 申请日期 | 2009-03-04 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/38493] ![]() |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | MITSUBISHI ELECTRIC CORPORATION |
| 推荐引用方式 GB/T 7714 | KUSUNOKI, MASATSUGU,OKA, TAKAFUMI. Method of manufacturing semiconductor optical element. US7611916. 2009-11-03. |
入库方式: OAI收割
来源:西安光学精密机械研究所
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